Adhesion properties of nitrogen ion implanted ultra-nanocrystalline diamond films on silicon substrate

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/42030

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題名:	Adhesion properties of nitrogen ion implanted ultra-nanocrystalline diamond films on silicon substrate
作者:	Palnitkar, U. A.;Joseph, P. T.;Niu, H.;Huang, H. Y.;Fang, W. L.;Cheng, H. F.;Tai, N. H.;林諭男;Lin, I-nan
貢獻者:	淡江大學物理學系
關鍵詞:	UNCD;Adhesion;Ion implantation;Interface structure
日期:	2008-04-01
上傳時間:	2010-02-23 14:21:41 (UTC+8)
出版者:	Elsevier
摘要:	Ultra-nanocrystalline diamond (UNCD) films prepared by microwave plasma enhanced chemical vapor deposition were implanted using 0.3 MeV nitrogen ions under a dose of 1013, 1014, and 1015 ions cm− 2. While the surface morphology of the UNCD films was not pronounced modified, the crystallinity of the films was changed appreciably due to ion implantation. The scratch test has been used to study the adhesion of the film to the substrate, which illustrated that the critical load, used as a measure of the adhesive strength, is found to increase with ion dose. Secondary ion mass spectroscopy (SIMS) analyses on the interfacial morphology indicated that the main factor in improving the adhesive strength is the modification on interfacial structure through inter-diffusion between film and substrate.
關聯:	Diamond and Related Materials 17(4-5), pp.864-867
DOI:	10.1016/j.diamond.2007.11.008
顯示於類別:	[物理學系暨研究所] 期刊論文

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