English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 62805/95882 (66%)
造访人次 : 3930584      在线人数 : 725
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜寻范围 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/42030


    题名: Adhesion properties of nitrogen ion implanted ultra-nanocrystalline diamond films on silicon substrate
    作者: Palnitkar, U. A.;Joseph, P. T.;Niu, H.;Huang, H. Y.;Fang, W. L.;Cheng, H. F.;Tai, N. H.;林諭男;Lin, I-nan
    贡献者: 淡江大學物理學系
    关键词: UNCD;Adhesion;Ion implantation;Interface structure
    日期: 2008-04-01
    上传时间: 2010-02-23 14:21:41 (UTC+8)
    出版者: Elsevier
    摘要: Ultra-nanocrystalline diamond (UNCD) films prepared by microwave plasma enhanced chemical vapor deposition were implanted using 0.3 MeV nitrogen ions under a dose of 1013, 1014, and 1015 ions cm− 2. While the surface morphology of the UNCD films was not pronounced modified, the crystallinity of the films was changed appreciably due to ion implantation. The scratch test has been used to study the adhesion of the film to the substrate, which illustrated that the critical load, used as a measure of the adhesive strength, is found to increase with ion dose. Secondary ion mass spectroscopy (SIMS) analyses on the interfacial morphology indicated that the main factor in improving the adhesive strength is the modification on interfacial structure through inter-diffusion between film and substrate.
    關聯: Diamond and Related Materials 17(4-5), pp.864-867
    DOI: 10.1016/j.diamond.2007.11.008
    显示于类别:[物理學系暨研究所] 期刊論文

    文件中的档案:

    档案 描述 大小格式浏览次数
    0KbUnknown438检视/开启
    index.html0KbHTML124检视/开启

    在機構典藏中所有的数据项都受到原著作权保护.

    TAIR相关文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回馈