Effect of Mo-buffer layer on the growth behavior and the electron field emission properties of UNCD films

doi:10.1016/j.diamond.2008.09.017

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/42029

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题名:	Effect of Mo-buffer layer on the growth behavior and the electron field emission properties of UNCD films
作者:	Liu, Keng-Fu;Chen, Li-Ju;Tai, Nyan-Hua;Lin, I-Nan
贡献者:	淡江大學物理學系
关键词:	Ultra-nanocrystalline diamond films;Mo-buffer layer;Nucleation behavior;Electron field emission properties
日期:	2009-02
上传时间:	2010-02-23 14:21:00 (UTC+8)
出版者:	Lausanne: Elsevier S.A.
摘要:	Mo-coating on Si-substrate is observed to significantly improve the formation kinetics of diamond nuclei and the growth behavior of ultra-nanocrystalline diamond (UNCD) films. Contrary to the phenomenon that diamond nuclei are only scarcely formed on bare Si-substrates leading to incomplete coverage of UNCD grains, the diamond nuclei (and the UNCD grains) are found to cover the whole surface of Mo-coated Si-substrates. While the Mo-coating markedly enhances the nucleation of diamonds, it degrades the electron field emission (EFE) properties of UNCD films. It is attributed to the conversion of the conducting Mo-metallic film into a resistive Mo2C layer during the microwave plasma CVD process. A sufficiently thick Mo-layer is found to enhance the nucleation of diamonds, while minimizing deleterious effect on their EFE properties with an improved turn-on-field of 13 V/μm and a current density of 55 μA/cm2 at the applied field of 30 V/μm.
關聯:	Diamond and Related Materials 18(2-3), pp.181-185
DOI:	10.1016/j.diamond.2008.09.017
显示于类别:	[物理學系暨研究所] 期刊論文

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