Fabrication and field emission properties of ultra-nanocrystalline diamond lateral emitters

doi:10.1016/j.diamond.2008.01.024

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/42028

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题名:	Fabrication and field emission properties of ultra-nanocrystalline diamond lateral emitters
作者:	Liou, Yan-lun;Liou, Jyun-cheng;Huang, Jin-hua;Tai, Nyan-Hwa;林諭男;Lin, I. N.
贡献者:	淡江大學物理學系
关键词:	Lateral emitter;Electron field emission;UNCD;MPECVD
日期:	2008-04-01
上传时间:	2010-08-10 09:44:40 (UTC+8)
出版者:	Elsevier
摘要:	Field emission characteristics of ultra-nanocrystalline diamond (UNCD) have recently caught much attraction due to its importance in technological applications. In this work, we have fabricated lateral-field emitters comprised of UNCD films, which were deposited in CH4/Ar medium by microwave plasma-enhanced chemical vapor deposition method. The substrates, silicon-on-insulator (SOI) or SiO2-coated silicon, were pre-treated by mixed-powders-ultrasonication process for forming diamond nuclei to facilitate the synthesis of UNCD films on these substrates. Lateral electron field emitters can thus be fabricated either on silicon-on-insulator (SOI) or silicon substrates. The lateral emitters thus obtained possess large field enhancement factor (β = 1500–1721) and exhibit good electron field emission properties, regardless of the substrate materials used. The electron field emission can be turned on at 5.25–5.50 V/μm, attaining 5500–6000 mA/mm2 at 12.5 V/μm (100 V applied voltage).
關聯:	Diamond and Related Materials 17(4-5), pp.776-781
DOI:	10.1016/j.diamond.2008.01.024
显示于类别:	[物理學系暨研究所] 期刊論文

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