Fabrication and field emission properties of ultra-nanocrystalline diamond lateral emitters

doi:10.1016/j.diamond.2008.01.024

機構典藏 > College of Sciences > Graduate Institute & Department of Physics > Journal Article > Item 987654321/42028

Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/42028

Title:	Fabrication and field emission properties of ultra-nanocrystalline diamond lateral emitters
Authors:	Liou, Yan-lun;Liou, Jyun-cheng;Huang, Jin-hua;Tai, Nyan-Hwa;林諭男;Lin, I. N.
Contributors:	淡江大學物理學系
Keywords:	Lateral emitter;Electron field emission;UNCD;MPECVD
Date:	2008-04-01
Issue Date:	2010-08-10 09:44:40 (UTC+8)
Publisher:	Elsevier
Abstract:	Field emission characteristics of ultra-nanocrystalline diamond (UNCD) have recently caught much attraction due to its importance in technological applications. In this work, we have fabricated lateral-field emitters comprised of UNCD films, which were deposited in CH4/Ar medium by microwave plasma-enhanced chemical vapor deposition method. The substrates, silicon-on-insulator (SOI) or SiO2-coated silicon, were pre-treated by mixed-powders-ultrasonication process for forming diamond nuclei to facilitate the synthesis of UNCD films on these substrates. Lateral electron field emitters can thus be fabricated either on silicon-on-insulator (SOI) or silicon substrates. The lateral emitters thus obtained possess large field enhancement factor (β = 1500–1721) and exhibit good electron field emission properties, regardless of the substrate materials used. The electron field emission can be turned on at 5.25–5.50 V/μm, attaining 5500–6000 mA/mm2 at 12.5 V/μm (100 V applied voltage).
Relation:	Diamond and Related Materials 17(4-5), pp.776-781
DOI:	10.1016/j.diamond.2008.01.024
Appears in Collections:	[Graduate Institute & Department of Physics] Journal Article

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