Growth and electron field emission properties of ultrananocrystalline diamond on silicon nanostructures

doi:10.1016/j.diamond.2008.10.020

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/42024

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题名:	Growth and electron field emission properties of ultrananocrystalline diamond on silicon nanostructures
作者:	Joseph, P. T.;Tai, N. H.;Cheng, Y. F.;Lee, C. Y.;Cheng, H. F.;Lin, I-Nan
贡献者:	淡江大學物理學系
关键词:	SiNS;UNCD;Electron field emission
日期:	2009-02
上传时间:	2010-02-23 14:15:55 (UTC+8)
出版者:	Lausanne: Elsevier S.A.
摘要:	The electron field emission (EFE) properties of Si nanostructures (SiNS), such as Si nanorods (SiNR) and Si nanowire (SiNW) bundles were investigated. Additionally, ultrananocrystalline diamond (UNCD) growth on SiNS was carried out to improve the EFE properties of SiNS via forming a combined UNCD/SiNS structure. The EFE properties of SiNS were improved after the deposition of UNCD at specific growth conditions. The EFE performance of SiNR (turn-on field, E0 = 5.3 V/μm and current density, Je = 0.53 mA/cm2 at an applied field of 15 V/μm) was better than SiNW bundles (turn-on field, E0 = 10.9 V/μm and current density, Je < 0.01 mA/cm2 at an applied field of 15 V/μm). The improved EFE properties with turn-on field, E0 = 4.7 V/μm, current density, Je = 1.1 mA/cm2 at an applied field of 15 V/μm was achieved for UNCD coated (UNCD grown for 60 min at 1200 W) SiNR. The EFE property of SiNW bundles was improved to a turn-on field, E0 = 8.0 V/μm, and current density, Je = 0.12 mA/cm2 at an applied field of 15 V/μm (UNCD grown for 30 min at 1200 W).
關聯:	Diamond and Related Materials 18(2-3), pp.169-172
DOI:	10.1016/j.diamond.2008.10.020
显示于类别:	[物理學系暨研究所] 期刊論文

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