Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/42020

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/42020

题名:	Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth
作者:	Chen, Y. C.;Zhong, X. Y.;Konicek, A. R.;Grierson, D. S.;Tai, N. H.;林諭男;Lin, I. N.;Kabius, B.;Hiller, J. M.;Sumant, A. V.;Carpick, R. W.;Auciello, O.
贡献者:	淡江大學物理學系
关键词:	atomic force microscopy;diamond;heat treatment;nanostructured materials;nanotechnology;nucleation;transition electron microscopy;XANES
日期:	2008-03
上传时间:	2010-08-10 09:48:52 (UTC+8)
出版者:	American Institute of Physics (AIP)
摘要:	This letter describes the fundamental process underlying the synthesis of ultrananocrystalline diamond (UNCD) films, using a new low-pressure, heat-assisted bias-enhanced nucleation (BEN)/bias enhanced growth (BEG) technique, involving H<sub>2</sub>/CH<sub>4</sub> gas chemistry. This growth process yields UNCD films similar to those produced by the Ar-rich/CH4 chemistries, with pure diamond nanograins (3–5 nm), but smoother surfaces (~6 nm rms) and higher growth rate (~1 µm/h). Synchrotron-based x-Ray absorption spectroscopy, atomic force microscopy, and transmission electron microscopy studies on the BEN-BEG UNCD films provided information critical to understanding the nucleation and growth mechanisms, and growth condition-nanostructure-property relationships.
關聯:	Applied Physics Letters 92(13), pp.133113(3 pages)
DOI:	10.1063/1.2838303
显示于类别:	[物理學系暨研究所] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
0003-6951_92(13)p133113.pdf		502Kb	Adobe PDF	529	检视/开启
index.html		0Kb	HTML	49	检视/开启

在機構典藏中所有的数据项都受到原著作权保护.

TAIR相关文章