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    题名: Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth
    作者: Chen, Y. C.;Zhong, X. Y.;Konicek, A. R.;Grierson, D. S.;Tai, N. H.;林諭男;Lin, I. N.;Kabius, B.;Hiller, J. M.;Sumant, A. V.;Carpick, R. W.;Auciello, O.
    贡献者: 淡江大學物理學系
    关键词: atomic force microscopy;diamond;heat treatment;nanostructured materials;nanotechnology;nucleation;transition electron microscopy;XANES
    日期: 2008-03
    上传时间: 2010-08-10 09:48:52 (UTC+8)
    出版者: American Institute of Physics (AIP)
    摘要: This letter describes the fundamental process underlying the synthesis of ultrananocrystalline diamond (UNCD) films, using a new low-pressure, heat-assisted bias-enhanced nucleation (BEN)/bias enhanced growth (BEG) technique, involving H<sub>2</sub>/CH<sub>4</sub> gas chemistry. This growth process yields UNCD films similar to those produced by the Ar-rich/CH4 chemistries, with pure diamond nanograins (3–5 nm), but smoother surfaces (~6 nm rms) and higher growth rate (~1 µm/h). Synchrotron-based x-Ray absorption spectroscopy, atomic force microscopy, and transmission electron microscopy studies on the BEN-BEG UNCD films provided information critical to understanding the nucleation and growth mechanisms, and growth condition-nanostructure-property relationships.
    關聯: Applied Physics Letters 92(13), pp.133113(3 pages)
    DOI: 10.1063/1.2838303
    显示于类别:[物理學系暨研究所] 期刊論文

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