淡江大學機構典藏:Item 987654321/42019
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    题名: Substrate temperature effects on the electron field emission properties of nitrogen doped ultra-nanocrystalline diamond
    作者: Chen, Y. C.;Tai, N. H.;林諭男;Lin, I. N.
    贡献者: 淡江大學物理學系
    关键词: UNCD;Nitrogen doped;MPECVD
    日期: 2008-04-01
    上传时间: 2010-08-10 09:44:25 (UTC+8)
    出版者: Elsevier
    摘要: For the purpose of improving the electron field emission properties of ultra-nanocrystalline diamond (UNCD) films, nitrogen species were doped into UNCD films by microwave plasma chemical vapor deposition (MPCVD) process at high substrate temperature ranging from 600° to 830 °C, using 10% N2 in Ar/CH4 plasma. Secondary ion mass spectrometer (SIMS) analysis indicates that the specimens contain almost the same amount of nitrogen, regardless of the substrate temperature. But the electrical conductivity increased nearly 2 orders of magnitude, from 1 to 90 cm− 1 Ω− 1, when the substrate temperature increased from 600° to 830 °C. The electron field emission properties of the films were also pronouncedly improved, that is, the turn-on field decreased from 20 V/μm to 10 V/μm and the electron field emission current density increased from less than 0.05 mA/cm2 to 15 mA/cm2. The possible mechanism is presumed to be that the nitrogen incorporated in UNCD films are residing at grain boundary regions, converting sp3-bonded carbons into sp2-bonded ones. The nitrogen ions inject electrons into the grain boundary carbons, increasing the electrical conductivity of the grain boundary regions, which improves the efficiency for electron transport from the substrate to the emission sites, the diamond grains.
    關聯: Diamond and Related Materials 17(4-5), pp.457-461
    DOI: 10.1016/j.diamond.2007.10.020
    显示于类别:[物理學系暨研究所] 期刊論文

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