The Effect of Ion Implantation on Field Emission Property of Nanodiamond Films

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/42016

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题名:	The Effect of Ion Implantation on Field Emission Property of Nanodiamond Films
作者:	Chen, Huang-chin;Palnitkar, Umesh;Niu, Huan;Cheng, Hsiu-fung;林諭男;Lin, I-nan
贡献者:	淡江大學物理學系
关键词:	implantation;nanocrystalline diamond
日期:	2008-08-01
上传时间:	2010-08-10 09:31:08 (UTC+8)
出版者:	American Scientific Publishers
摘要:	Nanocrystalline diamond films prepared by microwave plasma enhanced chemical vapor deposition (MPECVD) were implanted using 110 keV nitrogen ions under fluence ranging from 10(13)-10(14) ions/cm2. Scanning Electron Microscopy (SEM) and Raman spectroscopy were used to analyze the changes in the surface of the films before and after ion implantation. Results show that with nitrogen ion implantation in nanocrystalline diamond film cause to decrease in diamond crystallinity. The field emission measurement shows a sharp increase in current density with increase in dose. The ion implantation also alters the turn on field. It is observed that the structural damage caused by ion implantation plays a significant role in emission behaviour of nanocrystalline diamonds.
關聯:	Journal of Nanoscience and Nanotechnology 8(8), pp.4141-4145
DOI:	10.1166/jnn.2008.AN50
显示于类别:	[物理學系暨研究所] 期刊論文

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