English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 56570/90363 (63%)
造访人次 : 11878769      在线人数 : 72
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜寻范围 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/38039


    题名: Micro Pressure Sensors of 50 μm Size Fabricated by a Standard CMOS Foundry and a Novel Post Process
    作者: Wang, Hsin-hsiung;Hsu, Chun-wei;Liao, Wei-hao;楊龍杰;Yang, Lung-jieh;Dai, Ching-liang
    贡献者: 淡江大學機械與機電工程學系
    日期: 2006
    上传时间: 2010-04-15 10:30:16 (UTC+8)
    出版者: Piscataway: Institute of Electrical and Electronics Engineers (IEEE)
    摘要: This paper describes a piezoresistive micro pressure sensor with a size of 50μm made by a standard CMOS foundry and a novel post process. The material of the sensor diaphragm is silicon dioxide, and the piezoresistors are made by polysilicon. For releasing the diaphragms of the micro pressure sensors, this work proposes to use the front-side etching technique with etching holes of 5μm×5μm only. Finally, we use one of the protein stuffs, gelatin, to seal the etching holes. The sensitivity of the piezoresistive pressure sensor is 8.56±0.13 mV/V/psi.
    關聯: Micro Electro Mechanical Systems, 2006. MEMS 2006 Istanbul. 19th IEEE International Conference on, pp.578-581
    DOI: 10.1109/MEMSYS.2006.1627865
    显示于类别:[機械與機電工程學系暨研究所] 會議論文

    文件中的档案:

    档案 描述 大小格式浏览次数
    1084-6999_p578-581.pdf766KbAdobe PDF809检视/开启
    index.html0KbHTML203检视/开启

    在機構典藏中所有的数据项都受到原著作权保护.

    TAIR相关文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回馈