English  |  正體中文  |  简体中文  |  Items with full text/Total items : 56570/90363 (63%)
Visitors : 11878874      Online Users : 66
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/37908

    Title: A liquid-based gravity-driven etching-stop technique and its application to wafer level cantilever thickness control of AFM probes
    Authors: Lin, Wei-chih;Liang, Chao-chiun;Tsai, Ching-hsiang;Hsieh, Gen-wen;楊龍杰;Yang, Lung-jieh
    Contributors: 淡江大學機械與機電工程學系
    Date: 2005-01-30
    Issue Date: 2010-04-15 10:34:06 (UTC+8)
    Publisher: Piscataway: Institute of Electrical and Electronics Engineers (IEEE)
    Abstract: This paper mainly describes a liquid based gravity driven etching stop technique used for cantilever thickness control of atomic force microscope (AFM) probes on the wafer level. The technique makes use of the method of opposite etching trenches or the depth rulers. A pair of opposite trenches surrounds several AFM probes on both sides of the wafer to form probe chips. The trench depth on the cantilever front side is equal to the designed thickness of cantilevers. In the final step of the fabrication process for AFM probes, the wafer is etched by the KOH etchant to form the probe handles. The probe chips will be separated from the wafer simultaneously with the penetration of wafers at the trenches. The separated probes fall into the diiodomethane (CH2I2) solution beneath the KOH etchant and the wet etching stops automatically. The cantilever thickness of the AFM probes can then be wafer level controlled by the proposed etching stop technique.
    Relation: Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on, pp.500-503
    DOI: 10.1109/MEMSYS.2005.1453976
    Appears in Collections:[Graduate Institute & Department of Mechanical and Electro-Mechanical Engineering] Proceeding

    Files in This Item:

    File Description SizeFormat
    1084-6999_p500-503.pdf822KbAdobe PDF573View/Open

    All items in 機構典藏 are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - Feedback