本研究係以黃光微影製程並使用氫氧化鉀蝕刻(100)晶面的矽作為非等向性溼式蝕刻之製程，製備俱{111}面與(100)面夾54.74度的倒四角錐體矽模仁；並利用聚二甲基矽氧烷(PDMS)翻印矽模仁，由於PDMS之易拉伸性質而將PDMS施予單軸向拉伸以改變結構尺寸上及{111}面與(100)面夾角角度的改變；利用紫外光硬化技術將拉伸的PDMS之結構轉印，並使用電鑄技術將俱有倒四角錐體結構的UV膠翻印以當作高分子熱壓的模仁；最後將熱壓的高分子做光學檢測，並得到光的繞射圖形。 In this thesis, the Si mold containing inverted pyramid patterns with 54.74 degree between {111} planes and (100) plane was manufactured by photolithography process and Si (100) was prepared with KOH etching process for the anisotropic wet etching process. The polydimethylsiloxane was used to reprinted the structure of the si mold. Because polydimethylsiloxane was elongated easily, polydimethylsiloxane was forced to elongate single-axially to change the degree of the angle between {111} planes and (100) plane and the dimension of the structure. By using UV curing technology, the structure of the elongated PDMS would be reprinted. And then the electroforming technology was used to reprinted the UV curing agent with the structure of the inverted pyramid patterns for being the mold of polymer hot embossing. Finally, polymer was used for optical test and get diffraction pattern of the photo.
