鑽石擁有最高的硬度、最高的熱傳導率和低化學活性等特性，使其成為工程上最重要的材料之一。目前使用化學氣相沉積法（CVD）製造高品質石薄膜。但CVD鑽石薄膜有兩項主要的缺點:一個是成長的速度相當緩慢，另一個則是出成膜的表面太粗糙，而粗糙的表面限制了鑽石薄膜在各方面的應用。本研究是藉由反應離子蝕刻( RIE）和熱化學拋光來改善CVD鑽石薄磨的表面粗糙度。將鑽石薄膜表面蝕刻後再以熱化學來拋光CVD鑽石膜，並探討平面熱化學拋光與使用RIE後再以熱化學拋光的比較，最後以α-STEP、拉曼光譜及掃描式電子顯微鏡( SEM）觀察鑽石加工表面形貌變化。研究結果發現使用RIE確實可以將CVD鑽石薄膜表面蝕刻且弱化，縮短熱化學拋光的拋光時間。過程中涉入的可能機制也同樣被研究。 Diamond is one of the most important engineering materials for its extreme hardness, high thermal conductivity value and chemical inertness It is now rather common using chemical vapor deposition technique to produce high quality diamond film However, the slow growth rate and rough as-grown surface have limited many potential applications of CVD diamond This research aimed to improve the surface roughness of CVD diamond film by reactive ion etching (RIE) and thermal-chemical polishing Scanning electron microscope, micro-Raman spectroscopy and α-Step were used to study the surface morphology before and after the RIE/polishing processes The results showed that RIE could effectively shorten the processing time needed to polish the CVD diamond film by weakening its surface structure The possible mechanisms involved in the process were also studied.
