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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/35347

    Title: 矽基材表面性狀對奈米碳管成長機制影響之研究
    Other Titles: Influence of surface integrity of silicon substrate on the growth mechanisms of carbon nanotube
    Authors: 許家偉;Hsu, Chia-wei
    Contributors: 淡江大學機械與機電工程學系碩士班
    趙崇禮;Chao, Choung-lii
    Keywords: 奈米碳管;化學氣相沉積;變質層;carbon nanotubes;Chemical vapor deposition;amorphous layer
    Date: 2007
    Issue Date: 2010-01-11 06:25:09 (UTC+8)
    Abstract: 在本研究中採用化學氣相沉積法利用乙炔作為碳源,二茂鐵和二甲苯則作為金屬催化劑反應沉積奈米碳管。藉由改變矽基材表面處理參數,進而觀察不同矽基材表面處理參數對奈米碳管成長之影響,並且利用場發射掃描式電子顯微鏡觀察奈米碳管之成長形態。
    Chemical vapor deposition(CVD)was adopted in this research to synthesize multi-wall carbon nanotubes (MWCNT) where acetylene was used as carbon source and ferrocene-xylene worked as catalyst. Various surface pre-treatments were made on the silicon substrate to investigate the effect of the surface integrity on the growth of MWCNT. The morphology and characteristics of obtained carbon nanotubes were analyzed using field-emission scanning electron microscope(FESEM)and micro-Raman spectrometer.
    Results showed that atmospheric pressure air plasma(APAP)surface pre-treatment could increase the deposition rate of carbon and extend the growing temperature to up around 900℃. The amorphous layer induced by indentation or grinding processes, especially those having iron diffused into the amorphous layer, proved to have profound effect on the growth rate and growing temperature of carbon nanotube.
    Appears in Collections:[機械與機電工程學系暨研究所] 學位論文

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