鑽石具有高硬度、高熱導係數、透光範圍廣和耐腐蝕等特性，使其成為工程上最重要的材料之一，但是天然鑽石取得不易、價格昂貴等因素限制其應用廣度。目前使用化學氣相沈積法（CVD）製造多晶鑽石薄膜，其多方面特性與天然單晶鑽石近似，若能將CVD鑽石薄膜表面粗糙度有效平坦化，將使鑽石薄膜發揮極大潛力。本研究以反應離子蝕刻（RIE）加工鑽石薄膜，蝕刻氣體為O2、CF4、SF6，三種氣體依不同比例混合加工，也利用PLASMA在大氣中、室溫下預處理鑽石薄膜表面後，再做RIE蝕刻。使用SEM、α-STEP、EDAX與RAMAN等儀器分析薄膜表面型態及組成元素分析。 研究結果顯示CVD鑽石薄膜經由RIE處理後，表面有明顯改質的現象，將部分鑽石結構轉換為其他碳的同素異形體（類鑽、石墨、非晶碳...等），或是其他揮發性產物，達成材料移除目的。 Diamond, having many advanced physical and mechanical properties, is one of the most important materials used in the mechanical, telecommunication and optoelectronic industry. However, diamond has the highest hardness number of the known materials and is extremely difficult to be machined. In the present study, The microwave CVD method was employed to produce diamond films. The underlying material removal mechanisms, microstructure of the machined surface and related machining conditions were investigation. Plasmas based on pure O2 have produced moderately high yet erratic rates of reactive ion etching of diamond although accompanied by an increase in roughness of the surface. The etching of diamond in SF6 and CF4 plasmas has produced a rounding of the peaks on the surface of the diamond but without a decrease in overall roughness. The experiment has directly compared reactive ion etching of CVD grown diamond in a range of plasmas of potentially reactive plasmas (O2, CF4/ O2, SF6/ O2). The diamond structures of the protruded grains were transformed by the RIE into graphite, amorphous diamond and amorphous carbon.
