淡江大學機構典藏:Item 987654321/32587
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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/32587


    Title: 以Ba(Mg1/3Ta2/3)O3為緩衝層低溫成長次微米尺寸Pb(Zr0.52Ti0.48)O3薄膜之研究
    Other Titles: Low temperature deposition of submicron Pb(Z0.52Ti0.48O3) thin films using Ba(Mg1/3Ta2/3)O3 as buffer layer in pulsed laser deposition process
    Authors: 郭孟宗;Gou, Mon-zong
    Contributors: 淡江大學物理學系碩士班
    林諭男;Lin, I-nan
    Keywords: 雷射鍍膜;次微米PZT 薄膜;壓電力顯微鏡;壓電系數;PLD;micrometer size PZT;PFM;d33
    Date: 2008
    Issue Date: 2010-01-11 02:23:58 (UTC+8)
    Abstract: 本論文研究以脈衝雷射鍍膜法(PLD),使用鋇鎂鉭(BMT)為緩衝
    層,低溫成長鋯鈦酸鉛(PZT)鐵電薄膜。探討在不同鍍膜條件影響下
    之鋯鈦酸鉛(PZT)薄膜特性。並以黃光微影技術(Lift-off)製作之基板,使用雷射鍍膜法,成功的改良微米鐵電PZT 薄膜製程,再以壓電力顯微鏡(PFM),來討論薄膜上之各電域極化方向,並將之量化,求得不同尺寸的壓電薄膜其壓電系數(d33)。
    PZT (Pb(ZrTi)O3) thin films were deposition on BMT buffer layer by pulse laser deposition (PLD) in low temperature. First, we discussed the thin films properties in different growing conditions. Second we using lithography process (lift-off) made micrometer size substrates. We succeed growth micrometer size PZT thin films by PLD on the substrates.And we discussed the dielectric properties of micrometer size PZT thin films by piezoresponse force microscopy (PFM).
    Appears in Collections:[Graduate Institute & Department of Physics] Thesis

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