本論文旨在探討Ⅱ-Ⅵ族半導體奈米結構之穩定性研究。我們觀察覆蓋2nm之金膜後，不同大小之量子點結構在經過不同時間後的變化，希望藉由覆蓋金膜可以在長時間上保存半導體的奈米結構。 在實驗上，首先以熱壁式磊晶系統來製作我們的樣品，藉由控制GaAs(001)基板表面洗滌、磊晶厚度與成熟期時間等條件，得到較佳的量子點結構，接著以AFM來觀測覆蓋2nm金膜後，量子點結構在不同時間點上的結構變化。 在量子點的特殊結構中，我們經由適當的實驗條件，可以製作出量子環與量子花之特殊結構，針對這些實驗條件，我們分析出這些特殊結構的生長機制。 This thesis is devoted to study the stability of Ⅱ-Ⅵ semiconductor nanostructure.We study the stability of semiconductor QDs with respect to the time demain which different ages of QDs were capped by 2nm gold film .We hope to preserve the semiconductor nanostructure for a long time by capping the gold film. Experimentally, our samples of CdSe quantum dots were growth on the (001) GaAs substrate by a Hot Wall Epitaxy(HWE) System.We controlled the conditions of the etching , epitaxy thickness and mature period to get optimal structure of quantum dots.By using an atomic force microscopy (AFM),we observed the stability of semiconductor QDs , which were capped by 2nm gold film. On the other hand , we have fabricated some special structure such as：necklace , flower like as well as quantum ring structures.We also describe the mechanism for the formations of above structures.
