Ⅱ-Ⅵ族半導體奈米結構生長機制之研究

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 學位論文 > Item 987654321/32550

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题名:	Ⅱ-Ⅵ族半導體奈米結構生長機制之研究
其它题名:	Study for the formation mechanism in II-VI semiconductor nano structure
作者:	李偉新;Li, Wei-hsin
贡献者:	淡江大學物理學系碩士班鄭振益;Jen, Jen-yi
关键词:	Ⅱ-Ⅵ族半導體;量子點;奈米結構;熱壁式磊晶;硒化鎘;硒化鋅;Ⅱ-Ⅵ semiconductor;Quantum Dots;nano structure;Hot Wall Epitaxy;CdSe;ZnSe
日期:	2008
上传时间:	2010-01-11 02:20:39 (UTC+8)
摘要:	本論文主要在研究II-VI族半導體量子點奈米結構的生長機制和在量子點上鍍金膜之穩定性觀測，實驗內容包含觀測V-W mode和S-K mode磊晶模式的奈米結構之聚集與結合機制;在量子點上鍍金膜比較不同厚度對量子點結構穩定性之影響;ZnSe奈米洞之研究;在實驗的過程中發現特殊結構簡介。實驗方面以熱壁式磊晶系統製作樣品，在V-W mode以CdSe作為原料;S-K mode以ZnSe作為原料，然後藉由改變混合液比例、磊晶厚度、成熟期時間和控制基板溫度，來製作每個實驗的樣品。接著以AFM來觀測基板表面結構。實驗結果發現V-W mode結構變化比S-K mode明顯;鍍金膜能有效穩定奈米結構約2個月;製作ZnSe奈米洞的過程。 This thesis is devoted to study the quantum dots’nano structure of formation mechanism in II-VI semiconductor and to observe the stability of QDs were capped by gold film.The experiment contains to observe nano structure of V-W mode and S-K mode epitaxy,and their mechanism of assembling and association;to cap the gold film on top of QDs and to compare with different thickness which affect structure stability of QDs;study of ZnSe nano hole; preview of special structure which is descried at experiment process. About experiment,to grow sample by a hot wall epitaxy(HWE) system.Use CdSe for material in V-W mode;use ZnSe for material in S-K mode.Then by changing proportion of admixture liquid,epitaxy thickness,mature period and controlling temperature of substrate,to make sample of each experiment.Next by using atomic force microscopy (AFM) to observe structure of substrate surface. The result of experiment descried that the structure of V-W mode epitaxy is more obvious than S-K mode epitaxy;capping gold film can stabilize nano structure effectively about 2 months;the process of making ZnSe nano hole.
显示于类别:	[物理學系暨研究所] 學位論文

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