淡江大學機構典藏:Item 987654321/32550
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 64178/96951 (66%)
Visitors : 9692321      Online Users : 11410
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/32550


    Title: Ⅱ-Ⅵ族半導體奈米結構生長機制之研究
    Other Titles: Study for the formation mechanism in II-VI semiconductor nano structure
    Authors: 李偉新;Li, Wei-hsin
    Contributors: 淡江大學物理學系碩士班
    鄭振益;Jen, Jen-yi
    Keywords: Ⅱ-Ⅵ族半導體;量子點;奈米結構;熱壁式磊晶;硒化鎘;硒化鋅;Ⅱ-Ⅵ semiconductor;Quantum Dots;nano structure;Hot Wall Epitaxy;CdSe;ZnSe
    Date: 2008
    Issue Date: 2010-01-11 02:20:39 (UTC+8)
    Abstract: 本論文主要在研究II-VI族半導體量子點奈米結構的生長機制和在量子點上鍍金膜之穩定性觀測,實驗內容包含觀測V-W mode和S-K mode磊晶模式的奈米結構之聚集與結合機制;在量子點上鍍金膜比較不同厚度對量子點結構穩定性之影響;ZnSe奈米洞之研究;在實驗的過程中發現特殊結構簡介。
    實驗方面以熱壁式磊晶系統製作樣品,在V-W mode以CdSe作為原料;S-K mode以ZnSe作為原料,然後藉由改變混合液比例、磊晶厚度、成熟期時間和控制基板溫度,來製作每個實驗的樣品。接著以AFM來觀測基板表面結構。
    實驗結果發現V-W mode結構變化比S-K mode明顯;鍍金膜能有效穩定奈米結構約2個月;製作ZnSe奈米洞的過程。
    This thesis is devoted to study the quantum dots’nano structure of formation mechanism in II-VI semiconductor and to observe the stability of QDs were capped by gold film.The experiment contains to observe nano structure of V-W mode and S-K mode epitaxy,and their mechanism of assembling and association;to cap the gold film on top of QDs and to compare with different thickness which affect structure stability of QDs;study of ZnSe nano hole; preview of special structure which is descried at experiment process.
    About experiment,to grow sample by a hot wall epitaxy(HWE) system.Use CdSe for material in V-W mode;use ZnSe for material in S-K mode.Then by changing proportion of admixture liquid,epitaxy thickness,mature period and controlling temperature of substrate,to make sample of each experiment.Next by using atomic force microscopy (AFM) to observe structure of substrate surface.
    The result of experiment descried that the structure of V-W mode epitaxy is more obvious than S-K mode epitaxy;capping gold film can stabilize nano structure effectively about 2 months;the process of making ZnSe nano hole.
    Appears in Collections:[Graduate Institute & Department of Physics] Thesis

    Files in This Item:

    File SizeFormat
    0KbUnknown295View/Open

    All items in 機構典藏 are protected by copyright, with all rights reserved.


    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - Feedback