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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/32541

    Title: 以熱壁式磊晶系統生長自聚性量子點之研究
    Other Titles: Study for self-assembling quantum dots by hot wall epitaxy system
    Authors: 連加賢;Lan, Jar-shan
    Contributors: 淡江大學物理學系碩士班
    鄭振益;Jen, Jen-yi
    Keywords: 自聚性量子點;成熟期;熱處理;Self-assembling Quantum Dot;mature period;Annealing
    Date: 2006
    Issue Date: 2010-01-11 02:18:49 (UTC+8)
    Abstract: 本研究主要是在探討Ⅱ-Ⅵ族半導體自聚性量子點之成型特性。我們分別針對熱退火的溫度與時間來瞭解此兩項變因對量子點的影響,並找出最佳的量子點成型條件。
    This thesis is devoted to forming properties of Ⅱ-Ⅵ semiconductor self-assembling quantum dot. We study two factors which are annealing temperature and time respectively to realize how the two factors affect the forming of quantum dots. And then we try to find the best condition of self-assembling quantum dots.
    Our samples were growth by Hot Wall Epitaxy(HWE). The relations between the forming of quantum dots and the mature period are very closely. It affect the height、density and diameter of our quantum dots. The main purpose of this thesis is to manufacture high density、high quality and high photoluminescence (PL) intensity quantum dots;and then apply to the study of white LED.
    Appears in Collections:[物理學系暨研究所] 學位論文

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