此論文以高純度鋁片 (99.995%) ，利用電化學陽極氧化法處理，改變操作電壓及陽極氧化反應時間合成出具不同尺寸的多孔性陽極氧化鋁模版，再以化學電沈積法成長出200 nm,60 nm ,30 nm的銦奈米線。使用超導量子干涉磁量儀與物理性質系統量測系統對樣品進行磁性與電性行為的研究，從磁性量測結果中發現線俓分別為 200 nm、60 nm 與 30 nm 銦奈米線仍具有超導體的抗磁特性行為，在電性行為上發現200 nm與60 nm 銦奈米線在溫度低於超導轉變溫度下有電阻增加大的現象，並且隨著量測電流增大可以抑制低溫處的電阻大小。在外加磁場的電性量測上發現銦奈米線的表面超導抗磁性隨著線徑的縮小而增加，本實驗中溫度與電阻行為隨著尺寸縮小而不同於塊材的結果，與文獻所提出的結果相類似。 Porous anodic aluminum oxide (AAO) films were synthesized from high purity (99.995%) aluminum foils. Different pore sizes were obtained by adjusting applied voltage and reaction time. The products were then used as templates for fabricating indium nanowires of 30, 60 and 200 nm in diameter by chemical electro-deposition method. Magnetic and electrical properties of the superconductor indium nanowires were measured using a superconducting quantum interference device magnetometer and a physical properties measurement system. Experimental results show different electrical resistivity behavior in one-dimensional nanowires from that of bulk indium. Unexpected resistivity increase with decreasing temperature prevails below the superconducting transition temperature Tc in 60 and 200 nm, but not in 30-nm wire. Similar results have been reported by Zgirski et al. and by Vodolazov et al. Just as surprising is the observation in the 30-nm but not 60- and 200-nm wire that, below Tc and between approximately 500 and 1500 μA for, a non-zero voltage decreases with increasing current. The origins of these results are yet to be identified.
