本論文研究以偏壓輔助微波電漿化學氣相沈積法（MPECVD），在矽的基板上所合成的P型與N型半導化的奈米鑽石薄膜。 X光吸收近邊緣結構（X-ray Absorption Near Edge Structure)，對奈米鑽石薄膜之鍵結與電子結構來做分析，並找出摻雜元素在奈米鑽石膜中所造成的的影響。 我們發現在微米鑽石系列與奈米鑽石系列，在掺雜氮(或硼)時，sp2與sp3變化會因晶粒尺寸改變，此現象對應到場發射特性上，可以推測微米鑽石系列與奈米鑽石系列掺雜機制不同，場發射改善的原因也不同，在此論文中我們將深入討論。 Nitrogen- and Boron-doped Nanocrystalline Diamond (NCD) Thin Films were deposited on silicon substrate using a Microwave plasma-enhanced chemical vapor deposition (MPECVD) method. X-ray absorption near-edge structure (XANES), measurements have been performed chemical structure and bonding configuration for a variety of Nitrogen- doped、Boron-doped and undoped Nanocrystalline diamond Thin films. We find that sp2 and sp3 in microcrystalline diamond series and Nanocrystalline diamond series are different, when the grain size is reducing. The phenomenon is corresponding to the field emission properties. We suggest that doping in MCD and NCD have different mechanism. We will discuss in this paper.
