本論文是利用X光繞射(XRD)和X光反射率法(XRR)，對以InGaN/GaN為多層量子井(MQW)的多層膜樣品，成長在Al2O3為基底(0 0 1)方向來做研究。利用這兩種測量法不只可以清楚地量測到多層量子井中各層厚度，也可以確定InxGal-xN之中的摻雜度。在XRD擬合分析中得知在MQW厚度分別為142.15nm (607)、144.75nm (608) 和148.81nm (609)，和理論計算值142.6nm (607)、145.7nm (608) 、145.7nm (609)非常接近，而使用XRR的擬合分析結果也大致跟XRD相符。 X-ray diffraction (XRD) and X-ray reflectivity (XRR) are used to characterize the structure of the InGaN/GaN multiple quantum wells (MQWs) grown on the Al2O3 (0 0 1) substrate .Using these measurements, not only the layered structure of the MQWs is revealed clearly but also the In content χ of the InxGal-xN component can be determined reliably. The fitted results of XRD show that MQW widths are around 142.15nm (607), 144.75nm (608) and 148.81nm (609) that are very lost to the theoretical calculation as 142.6nm (607), 145.7nm (608) and 145.7nm (609).the data obtained from the reflectivity (XRR) measurements are in agreement with that obtained from XRD.
