本文旨在探討II-VI族半導體量子環之產生機制。藉由改變清洗混和液方式，洗滌出不同深度之坑洞的基板，利用此基板進行磊晶並改變成熟期時間，然後再利用AFM與SEM觀測量子環之生成過程。 藉由SEM可以觀察到以水平搖晃方式所清洗出的基板進行磊晶，並改變成熟期時間，可以瞭解到在坑洞周圍的原料會聚集形成量子點，接著又因為成熟期之作用，結合形成量子環結構。 以AFM量測以平放底部方式所清洗出的基板進行磊晶，改變成熟期時間，可以觀測到在坑洞周圍的原料除了會聚集形成量子點外，也會移動到坑洞底部，使坑洞變淺，且坑洞周圍的量子點也會因為移動而結合形成量子環結構。 This thesis is devoted to study the formation mechanism of II-VI semiconductor quantum rings. By changing the rinsing mode of admixture liquid, substrates with holes were obtained. Then, we grow the CdSe quantum dots on these substrates, and change the ripening time. Finally we used AFM and SEM to observe the growth mechanism of the quantum rings. Using SEM, we have observed the growth mechanism of the CdSe quantum rings on the GaAs substrate, which was rinsed horizontal falteringly, and change the ripening time. The CdSe cluster was around the holes at the beginning,then assemble to quantum dots. After more ripening time, quantum dots were associated to quantum rings. We also observed the growth process of the CdSe quantum rings on the GaAs substrate which was rinsed with fixed position, but change ripening time. We formed that the CdSe cluster was around the holes, that not only assemble to quantum dots, but also move to the bottom of hole, and finally quantum dots were associated to quantum rings.
