Photoemission study of Sm overlayers deposited on Nb

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/28057

請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/28057

題名:	Photoemission study of Sm overlayers deposited on Nb
作者:	張經霖;Chang, C. L.;Dong, C. L.;Pi, T. W.
貢獻者:	淡江大學物理學系
日期:	2000-04
上傳時間:	2009-12-31 11:01:00 (UTC+8)
出版者:	中華民國物理學會
摘要:	The valence of Sm overlayers deposited on a polycrystalline Nb substrate has been studied in-situ by photoemission spectroscopy using synchrotron radiation. The Sm valences are determined by resonantly enhanced emissions from trivalent (4f^5) and divalent (4f^6) states at photon energies of 141 eV and 135 eV respectively. For coverages of less than one monolayer trivalent Sm dominates. Divalent peaks start to grow at the coverage of about one monolayer. In the mean time the relative intensity of the contribution from the divalent state increases with film thickness, indicating an influence of Sm valence by the Nb substrate near the interface region. The divalent peaks are almost completely suppressed upon exposure of 0.1 langmuir of oxygen, which suggests that the mixed valence in Sm is heterogeneous.
關聯:	Chinese Journal of Physics=中國物理學刊 38(2-I)，pp.146-149
顯示於類別:	[物理學系暨研究所] 期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
		0Kb	Unknown	322	檢視/開啟
index.html		0Kb	HTML	100	檢視/開啟
index.html	館藏資訊	0Kb	HTML	219	檢視/開啟
Photoemission study of Sm overlayers deposited on Nb.pdf		100Kb	Adobe PDF	1	檢視/開啟

在機構典藏中所有的資料項目都受到原著作權保護.

TAIR相關文章