淡江大學機構典藏:Item 987654321/27920
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 62805/95882 (66%)
造访人次 : 3927903      在线人数 : 775
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜寻范围 查询小技巧：
  • 您可在西文检索词汇前后加上"双引号"，以获取较精准的检索结果
  • 若欲以作者姓名搜寻，建议至进阶搜寻限定作者字段，可获得较完整数据
    •  进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/27920


    题名: Si adsorption on Cu(1 1 0) surface from ab initio calculation
    作者: He, Guo-min;Li, Shu-ping;周子聰;Zhou, Zi-cong
    贡献者: 淡江大學物理學系
    关键词: Ab initio quantum chemical methods and calculations;Chemisorption;Copper;Silicon;Silicides
    日期: 2004-03-20
    上传时间: 2009-12-31 10:52:32 (UTC+8)
    出版者: Elsevier
    摘要: Using density-functional theory within the generalized gradient approximation the interaction between atomic Si and the Cu(1 1 0) surface is investigated. Various structures of on-surface adsorption as well as surface-substitutional adsorption for a wide range of Si coverage are considered. Our results shows that the Cu(1 1 0) surface is active towards adsorption of Si. The energetically most preferred structure is the c(2 × 2)-Si/Cu(1 1 0) surface alloy. The reason that (2 × 2) Si chain can form on c(2 × 2)-Si/Cu(1 1 0) surface is due to the particular stability of c(2 × 2)-Si/Cu(1 1 0) surface.
    關聯: Surface Science 553(1-3), pp.126-132
    DOI: 10.1016/j.susc.2004.01.053
    显示于类别:[物理學系暨研究所] 期刊論文

    文件中的档案:

    档案 描述 大小格式浏览次数
    0KbUnknown192检视/开启
    index.html館藏資訊0KbHTML93检视/开启
    Si adsorption on Cu(1 1 0) surface from ab initio calculation.pdf461KbAdobe PDF1检视/开启

    在機構典藏中所有的数据项都受到原著作权保护.

    TAIR相关文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回馈