Orientation of graphitic planes during annealing of "dip deposited" amorphous carbon film: A carbon K-edge X-ray absorption near-edge study

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题名:	Orientation of graphitic planes during annealing of "dip deposited" amorphous carbon film: A carbon K-edge X-ray absorption near-edge study
作者:	Ray, S. C.;Pao, C. W.;Tsai, H. M.;Bose, B.;Chiou, J. W.;彭維鋒;Pong, Way-faung;Dasgupta, D.
贡献者:	淡江大學物理學系
关键词:	Graphitic carbon;Annealing;Raman spectroscopy
日期:	2006-08-01
上传时间:	2009-12-31 10:52:26 (UTC+8)
出版者:	Elsevier
摘要:	Annealing effect of amorphous carbon thin films on Si(1 0 0) substrates is studied by normal incidence and angle dependent carbon K-edge X-ray absorption near-edge structure (XANES) spectroscopy. The angle dependence of the XANES signal shows that the graphitic basal planes are oriented perpendicular to the surface when the film is annealed at 1000 °C. Micro-Raman spectroscopy reveals two well-separated bands the D band at 1355 cm−1 and G band at ∼1600 cm−1, and their ID/IG intensity ratio indicates the formation of more graphitic film at higher annealing temperatures. X-ray diffraction pattern of 1000 °C temperature annealed film confirms the formation of graphite structure.
關聯:	Carbon 44(10), pp.1982-1985
DOI:	10.1016/j.carbon.2006.01.022
显示于类别:	[物理學系暨研究所] 期刊論文

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