EXAFS studies of the microstructure of semiconductor alloys, defects, and metal-semiconductor interfaces

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/27915

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题名:	EXAFS studies of the microstructure of semiconductor alloys, defects, and metal-semiconductor interfaces
作者:	Bunker, B. A.;Islam, Quazi T.;Bandyopadhyay, Pathikrit;彭維鋒;Pong, Way-faung
贡献者:	淡江大學物理學系
日期:	1988
上传时间:	2009-12-31 10:52:17 (UTC+8)
出版者:	London: Academic Press
摘要:	Recent applications of EXAPS spectroscopy are discussed: (1) Fe impurities implanted into Si occupy a distorted tetrahedral interstitial site where the first coordination shell expands about the impurity atom and the second shell contracts: (2) the local MnSe and ZnSe bond lengths in the diluted magnetic semiconductor Zn1−xMnxSe are constant within ∼0.01A even though the lattice constant as determined by x-ray diffraction varies by approximately 0.2 Å and the system undergoes a structural phase change; (3) the ferroelectric phase transition in Pb1−xGexTe has an order-disorder as well as displacive character; and (4) preliminary results show the feasibility of non-destructive measurement of a “buried” Al/GaAs interface.
關聯:	Superlattices and Microstructures 4(4-5), pp.489-492
DOI:	10.1016/0749-6036(88)90223-6
显示于类别:	[物理學系暨研究所] 期刊論文

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