Giant optical anisotropy in R-plane GaN/AlGaN quantum wells caused by valence band mixing effect

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/27889

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题名:	Giant optical anisotropy in R-plane GaN/AlGaN quantum wells caused by valence band mixing effect
作者:	Chen, Chun-Nan;Su, Wei-Long;Chiang, Jih-Chen;Lo, Ikai;Wang, Wan-Tsang;Lee, Meng-En
贡献者:	淡江大學物理學系
关键词:	Optical anisotropy;Optical matrix element;R-plane;Valence band mixing
日期:	2008-03
上传时间:	2013-07-09 15:24:08 (UTC+8)
出版者:	Amsterdam: Elsevier BV * North-Holland
摘要:	This study investigates the optical anisotropy spectrum in the R-plane (i.e., the View the MathML source[101¯2]-oriented layer plane) of GaN/Al0.2Ga0.8N quantum wells of different widths. The optical matrix elements in the wurtzite quantum wells are calculated using the k⋅pk⋅p finite difference scheme. The calculations show that the valence band mixing effect produces giant in-plane optical anisotropy in View the MathML source[101¯2]-oriented GaN/Al0.2Ga0.8N quantum wells with a narrow width. The nature of the in-plane optical anisotropy is found to be dependent on the well width. Specifically, it is found that the anisotropy changes from x′x′-polarization to y′y′-polarization as the well width increases.
關聯:	Physics Letters. Section A: General, Atomic and Solid State Physics 372(10), pp.1691-1694
DOI:	10.1016/j.physleta.2007.10.021
显示于类别:	[物理學系暨研究所] 期刊論文

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