A study of porous silicon prepared under different HF concentrations by positron annihilation

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/27874

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題名:	A study of porous silicon prepared under different HF concentrations by positron annihilation
作者:	Huang, C. C.;Chang, I. M.;Huang, J. H.;Fan, J. C.;Chen, Y. F.;鄭伯昆;Tseng, P. K.
貢獻者:	淡江大學物理學系
日期:	1998-01-05
上傳時間:	2009-12-31 10:49:49 (UTC+8)
出版者:	Elsevier
摘要:	Two-dimensional angular correlation of positron-electron annihilation radiation and positron-lifetime experiments have been performed on lightly doped porous silicons prepared under different HF concentrations. Positronium formation in the etched pores and positron trapped in voids are observed in both experiments. A surprising result is found that both positron lifetime and momentum spectra show a reduction in the size of the etched pores with decreasing HF concentration in the etching solution. This trend is different from the intuitive expectation that the pore size increases with increasing porosity. Our result can be explained in terms of the formation mechanism of porous film in lightly doped silicon.
關聯:	Physics Letters A 237(3), pp.183-188
DOI:	10.1016/S0375-9601(97)00703-2
顯示於類別:	[物理學系暨研究所] 期刊論文

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