淡江大學機構典藏:Item 987654321/27869
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    Title: Theory for Slightly Doped Antiferromagnetic Mott Insulators
    Authors: Lee, T. K.;Ho, Chang-ming;Nagaosa, Naoto
    Contributors: 淡江大學物理學系
    Date: 2003-02
    Issue Date: 2013-07-09 15:22:07 (UTC+8)
    Publisher: College Park: American Physical Society
    Abstract: New trial wave functions, constructed explicitly from the unique Mott insulating state with antiferromagnetic order, are proposed to describe the ground state of a Mott insulator slightly doped with holes or electrons. A rigid band is observed as charged quasiparticles with well-defined momenta being realized in these states. These states have much less superconducting correlations than previously studied ones. Small Fermi patches obtained are consistent with recent experiments on high T(c) cuprates doped lightly with holes or electrons.
    Relation: Physical Review Letters 90(6), 067001(4 pages)
    DOI: 10.1103/PhysRevLett.90.067001
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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