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    题名: Initial-stage growth phenomena and distribution of local configurations of the restricted solid-on-solid model
    作者: Chien, Chih-Chun;Pang, Ning-Ning;Tzeng, Wen-Jer
    贡献者: 淡江大學物理學系
    关键词: Computer simulation;Convergence of numerical methods;Correlation methods;Electrodeposition;Epitaxial growth;Markov processes;Mathematical models;Molecular beams;Probability distributions;Random processes;Surface roughness;Electrochemical deposition;Random deposition (RD);Reaction energy;Restricted solid-on-solid (RSOS) model;Crystal growth;bacterial phenomena and functions;biophysics;cell division;electrochemistry;methodology;probability;theoretical model;time;Bacterial Physiology;Biophysics;Cell Division;Electrochemistry;Markov Chains;Models;Theoretical;Time Factors
    日期: 2004-08
    上传时间: 2013-07-09 15:16:43 (UTC+8)
    出版者: College Park: American Physical Society
    摘要: We take a detailed study on the restricted solid-on-solid (RSOS) model with finite nearest-neighbor height difference S. We numerically show that, for all finite values of S, the system belongs to the random-deposition (RD) class in the early time stage and then crossovers to the Kardar-Parisi-Zhang (KPZ) class. We find that the crossover time scales as Szeta with the crossover exponent zeta=2.06. Besides, we analytically study the RSOS model by grouping consecutive sites into local configurations to obtain the Markov chain describing the time evolution of the probability distribution of these local configurations. For demonstration, we use the RSOS model with S=2 as an explicit example and calculate the correlation functions and even scaling exponents based on the obtained probability distribution of local configurations. The results are very consistent with those obtained from direct simulation of the RSOS model.
    關聯: Physical Review E (Statistical, Nonlinear, and Soft Matter Physics) 70(2), 021602(8pages)
    DOI: 10.1103/PhysRevE.70.021602
    显示于类别:[物理學系暨研究所] 期刊論文

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