Electronic structure of CeAl2 thin films studied by X-ray absorption spectroscopy

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/27818

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/27818

题名:	Electronic structure of CeAl2 thin films studied by X-ray absorption spectroscopy
作者:	張經霖;Chang, C. L.;Dong, C. L.;Chen, C. L.;Chen, Y. Y.;Asokan, K.;Lee, J. F.;Guo. J. H.
贡献者:	淡江大學物理學系
关键词:	XANES;Mixed valence;Surface;Thin film
日期:	2006-05-01
上传时间:	2009-12-31 10:46:30 (UTC+8)
出版者:	Elsevier
摘要:	We report X-ray absorption near edge structures (XANES) study of CeAl2 thin films of various thicknesses, 40–120 nm, at Al K- and Ce L3-edges. The threshold of the absorption features at the Al K-edge shifts to the higher photon energy side as film thickness decreases, implying a decreased in Al p-orbital charges. On the other hand, from Ce L3-edge spectra, we observed a decrease in the 5d4f occupancy as the surface-to-bulk ratio increases. The valence of Ce in these thin films, as revealed by the Ce L3-edge spectral results, is mainly trivalent. From a more detailed analysis we found a small amount of Ce4+ contribution, which increases with decreasing film thickness. Our results indicate that the surface-to-bulk ratio is the key factor which affects the electronic structure of CeAl2 thin films. The above observations also suggest that charge transfer from Al to Ce is associated with the decrease of the film thickness.
關聯:	Applied Surface Science 252(15), pp.5372-5375
DOI:	10.1016/j.apsusc.2005.12.042
显示于类别:	[物理學系暨研究所] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
		0Kb	Unknown	369	检视/开启
index.html		0Kb	HTML	178	检视/开启

在機構典藏中所有的数据项都受到原著作权保护.

TAIR相关文章