English  |  正體中文  |  简体中文  |  Items with full text/Total items : 63190/95884 (66%)
Visitors : 4666382      Online Users : 424
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/27818

    Title: Electronic structure of CeAl2 thin films studied by X-ray absorption spectroscopy
    Authors: 張經霖;Chang, C. L.;Dong, C. L.;Chen, C. L.;Chen, Y. Y.;Asokan, K.;Lee, J. F.;Guo. J. H.
    Contributors: 淡江大學物理學系
    Keywords: XANES;Mixed valence;Surface;Thin film
    Date: 2006-05-01
    Issue Date: 2009-12-31 10:46:30 (UTC+8)
    Publisher: Elsevier
    Abstract: We report X-ray absorption near edge structures (XANES) study of CeAl2 thin films of various thicknesses, 40–120 nm, at Al K- and Ce L3-edges. The threshold of the absorption features at the Al K-edge shifts to the higher photon energy side as film thickness decreases, implying a decreased in Al p-orbital charges. On the other hand, from Ce L3-edge spectra, we observed a decrease in the 5d4f occupancy as the surface-to-bulk ratio increases. The valence of Ce in these thin films, as revealed by the Ce L3-edge spectral results, is mainly trivalent. From a more detailed analysis we found a small amount of Ce4+ contribution, which increases with decreasing film thickness. Our results indicate that the surface-to-bulk ratio is the key factor which affects the electronic structure of CeAl2 thin films. The above observations also suggest that charge transfer from Al to Ce is associated with the decrease of the film thickness.
    Relation: Applied Surface Science 252(15), pp.5372-5375
    DOI: 10.1016/j.apsusc.2005.12.042
    Appears in Collections:[物理學系暨研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat

    All items in 機構典藏 are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - Feedback