淡江大學機構典藏:Item 987654321/27805
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    題名: Band-gap modification of defective carbon nanotubes under a transverse electric field
    作者: Tien, Li-Gan;Tsai, Chuen-Horng;Li, Feng-Yin;Lee, Ming-Hsien
    貢獻者: 淡江大學物理學系
    日期: 2005-12
    上傳時間: 2013-07-09 15:16:05 (UTC+8)
    出版者: College Park: American Physical Society
    摘要: Ab initio calculations show that the band-gap modulation of semiconducting carbon nanotubes with mono-vacancy defect can be easily achieved by applying a transverse electric field. We found that the band structures of the defective carbon nanotubes vary quite differently from that of the perfect nanotube, and strongly depend on the applied direction of the transverse electric field. A mechanism is proposed to explain the variation of the band gap, and potential applications of these phenomena are discussed.
    關聯: Physical Review B (Condensed Matter and Materials Physics) 72(24), 245417(6pages)
    DOI: 10.1103/PhysRevB.72.245417
    顯示於類別:[物理學系暨研究所] 期刊論文

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