淡江大學機構典藏:Item 987654321/27805
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 62822/95882 (66%)
造访人次 : 4029308      在线人数 : 564
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜寻范围 查询小技巧：
  • 您可在西文检索词汇前后加上"双引号"，以获取较精准的检索结果
  • 若欲以作者姓名搜寻，建议至进阶搜寻限定作者字段，可获得较完整数据
    •  进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/27805


    题名: Band-gap modification of defective carbon nanotubes under a transverse electric field
    作者: Tien, Li-Gan;Tsai, Chuen-Horng;Li, Feng-Yin;Lee, Ming-Hsien
    贡献者: 淡江大學物理學系
    日期: 2005-12
    上传时间: 2013-07-09 15:16:05 (UTC+8)
    出版者: College Park: American Physical Society
    摘要: Ab initio calculations show that the band-gap modulation of semiconducting carbon nanotubes with mono-vacancy defect can be easily achieved by applying a transverse electric field. We found that the band structures of the defective carbon nanotubes vary quite differently from that of the perfect nanotube, and strongly depend on the applied direction of the transverse electric field. A mechanism is proposed to explain the variation of the band gap, and potential applications of these phenomena are discussed.
    關聯: Physical Review B (Condensed Matter and Materials Physics) 72(24), 245417(6pages)
    DOI: 10.1103/PhysRevB.72.245417
    显示于类别:[物理學系暨研究所] 期刊論文

    文件中的档案:

    档案 描述 大小格式浏览次数
    1098-0121_72(24)p245417(6pages).pdf154KbAdobe PDF220检视/开启
    index.html0KbHTML337检视/开启
    index.html0KbHTML140检视/开启

    在機構典藏中所有的数据项都受到原著作权保护.

    TAIR相关文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回馈