English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 51296/86402 (59%)
造訪人次 : 8167600      線上人數 : 129
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋
    請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27805


    題名: Band-gap modification of defective carbon nanotubes under a transverse electric field
    作者: Tien, Li-Gan;Tsai, Chuen-Horng;Li, Feng-Yin;Lee, Ming-Hsien
    貢獻者: 淡江大學物理學系
    日期: 2005-12
    上傳時間: 2013-07-09 15:16:05 (UTC+8)
    出版者: College Park: American Physical Society
    摘要: Ab initio calculations show that the band-gap modulation of semiconducting carbon nanotubes with mono-vacancy defect can be easily achieved by applying a transverse electric field. We found that the band structures of the defective carbon nanotubes vary quite differently from that of the perfect nanotube, and strongly depend on the applied direction of the transverse electric field. A mechanism is proposed to explain the variation of the band gap, and potential applications of these phenomena are discussed.
    關聯: Physical Review B (Condensed Matter and Materials Physics) 72(24), 245417(6pages)
    DOI: 10.1103/PhysRevB.72.245417
    顯示於類別:[物理學系暨研究所] 期刊論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    1098-0121_72(24)p245417(6pages).pdf154KbAdobe PDF124檢視/開啟
    index.html0KbHTML155檢視/開啟
    index.html0KbHTML8檢視/開啟

    在機構典藏中所有的資料項目都受到原著作權保護.

    TAIR相關文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回饋