X-ray-absorption spectroscopy of CoSi2

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题名:	X-ray-absorption spectroscopy of CoSi2
其它题名:	CoSi2的X-ray吸收光譜研究
作者:	彭維鋒;Pong, Way-faung;Chang, Y. K.;Mayanovic, Robert A.;Ho, G. H.;Lin, H. J.;Ko, S. H.;鄭伯昆;Tseng, P. K.;Chen, Chien-Ta;Hirya, Atsunari;Watanabe, M.
贡献者:	淡江大學物理學系
日期:	1996-06-01
上传时间:	2009-12-31 10:43:13 (UTC+8)
出版者:	College Park: American Physical Society (APS)
摘要:	X-ray-absorption near-edge structure (XANES) spectra of thin-film CoSi2 were measured at the Si K edge and Co L3 edge using the total electron yield mode. The Si K-edge results for CoSi2 showed a dramatic reduction of intensity in the first broad feature accompanied by a rise in a relatively strong and sharp feature at higher binding energies when compared to XANES spectra for crystalline Si. We attribute these two features to the Si 1s photoelectron excitations to a broad Si 3p nonbonding band and a relatively narrow band of hybridized Si p–Co 3d antibonding states, respectively. Analysis of the Co L3-edge white line spectra for CoSi2 reveals the appearance of a triple structure, which can be attributed to excitations to the unoccupied Co 3d nonbonding states and hybridized antibonding Co (3d,4s)–Si p states.
關聯:	Physical Review B 53(24), pp.16510-16515
DOI:	10.1103/PhysRevB.53.16510
显示于类别:	[物理學系暨研究所] 期刊論文

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