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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27768


    Title: X-ray-absorption spectroscopy of CoSi2
    Other Titles: CoSi2的X-ray吸收光譜研究
    Authors: 彭維鋒;Pong, Way-faung;Chang, Y. K.;Mayanovic, Robert A.;Ho, G. H.;Lin, H. J.;Ko, S. H.;鄭伯昆;Tseng, P. K.;Chen, Chien-Ta;Hirya, Atsunari;Watanabe, M.
    Contributors: 淡江大學物理學系
    Date: 1996-06-01
    Issue Date: 2009-12-31 10:43:13 (UTC+8)
    Publisher: College Park: American Physical Society (APS)
    Abstract: X-ray-absorption near-edge structure (XANES) spectra of thin-film CoSi2 were measured at the Si K edge and Co L3 edge using the total electron yield mode. The Si K-edge results for CoSi2 showed a dramatic reduction of intensity in the first broad feature accompanied by a rise in a relatively strong and sharp feature at higher binding energies when compared to XANES spectra for crystalline Si. We attribute these two features to the Si 1s photoelectron excitations to a broad Si 3p nonbonding band and a relatively narrow band of hybridized Si p–Co 3d antibonding states, respectively. Analysis of the Co L3-edge white line spectra for CoSi2 reveals the appearance of a triple structure, which can be attributed to excitations to the unoccupied Co 3d nonbonding states and hybridized antibonding Co (3d,4s)–Si p states.
    Relation: Physical Review B 53(24), pp.16510-16515
    DOI: 10.1103/PhysRevB.53.16510
    Appears in Collections:[物理學系暨研究所] 期刊論文

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