The ion-beam channeling technique has been used to characterize the interface and the first few layers of [100] GaSb/AlSb superlattice structures. Strain caused by alternating tensile and compressive stress has been detected by measuring the oscillation of the [110]-aligned direction with depth. From the angular displacement and its oscillation, the amount of strain in the superlattice has been determined directly.
Relation:
Physical Review B (Condensed Matter) 28(7), pp.4033-4036
