Comparison of electronic structures of RuO<sub>2</sub> and IrO<sub>2</sub> nanorods investigated by x-ray absorption and scanning photoelectron microscopy

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題名:	Comparison of electronic structures of RuO₂ and IrO₂ nanorods investigated by x-ray absorption and scanning photoelectron microscopy
作者:	Tsai, H. M.;Babu, P. D.;Pao, C. W.;Chiou, J. W.;Jan, J. C.;Krishna Kumar, K. P.;錢凡之;Chien, F. Z.;彭維鋒;Pong, Way-faung;Tsai, M. H.;Chen, Chih-Hao;Jang, L. Y.;Lee, J. F.;Chen, R. S.;Huang, Y. S.;Tsai, D. S.
貢獻者:	淡江大學物理學系
日期:	2007-01-22
上傳時間:	2009-12-31 10:41:52 (UTC+8)
出版者:	American Institute of Physics (AIP)
摘要:	Through-wafer interconnects by aligned carbon nanotube for three-dimensional stack integrated chip packaging applications have been reported in this letter. Two silicon wafers are bonded together by tetra-ethyl-ortho-silicate. The top wafer (100 μm thick) with patterned through-holes allows carbon nanotubes to grow vertically from the catalyst layer (Fe) on the bottom wafer. By using thermal chemical vapor deposition technique, the authors have demonstrated the capability of growing aligned carbon nanotube bundles with an average length of 140 μm and a diameter of 30 μm from the through holes. The resistivity of the bundles is measured to be 0.0097 cm by using a nanomanipulator. © 2007 American Institute of Physics.
關聯:	Applied Physics Letters 91(4), pp.042108
DOI:	10.1063/1.2759989
顯示於類別:	[物理學系暨研究所] 期刊論文

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