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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27751

    Title: Comparison of electronic structures of RuO2 and IrO2 nanorods investigated by x-ray absorption and scanning photoelectron microscopy
    Authors: Tsai, H. M.;Babu, P. D.;Pao, C. W.;Chiou, J. W.;Jan, J. C.;Krishna Kumar, K. P.;錢凡之;Chien, F. Z.;彭維鋒;Pong, Way-faung;Tsai, M. H.;Chen, Chih-Hao;Jang, L. Y.;Lee, J. F.;Chen, R. S.;Huang, Y. S.;Tsai, D. S.
    Contributors: 淡江大學物理學系
    Date: 2007-01-22
    Issue Date: 2009-12-31 10:41:52 (UTC+8)
    Publisher: American Institute of Physics (AIP)
    Abstract: Through-wafer interconnects by aligned carbon nanotube for three-dimensional stack integrated chip packaging applications have been reported in this letter. Two silicon wafers are bonded together by tetra-ethyl-ortho-silicate. The top wafer (100 μm thick) with patterned through-holes allows carbon nanotubes to grow vertically from the catalyst layer (Fe) on the bottom wafer. By using thermal chemical vapor deposition technique, the authors have demonstrated the capability of growing aligned carbon nanotube bundles with an average length of 140 μm and a diameter of 30 μm from the through holes. The resistivity of the bundles is measured to be 0.0097 cm by using a nanomanipulator. © 2007 American Institute of Physics.
    Relation: Applied Physics Letters 91(4), pp.042108
    DOI: 10.1063/1.2759989
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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