Comparison of electronic structures of RuO<sub>2</sub> and IrO<sub>2</sub> nanorods investigated by x-ray absorption and scanning photoelectron microscopy

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/27751

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/27751

题名:	Comparison of electronic structures of RuO₂ and IrO₂ nanorods investigated by x-ray absorption and scanning photoelectron microscopy
作者:	Tsai, H. M.;Babu, P. D.;Pao, C. W.;Chiou, J. W.;Jan, J. C.;Krishna Kumar, K. P.;錢凡之;Chien, F. Z.;彭維鋒;Pong, Way-faung;Tsai, M. H.;Chen, Chih-Hao;Jang, L. Y.;Lee, J. F.;Chen, R. S.;Huang, Y. S.;Tsai, D. S.
贡献者:	淡江大學物理學系
日期:	2007-01-22
上传时间:	2009-12-31 10:41:52 (UTC+8)
出版者:	American Institute of Physics (AIP)
摘要:	Through-wafer interconnects by aligned carbon nanotube for three-dimensional stack integrated chip packaging applications have been reported in this letter. Two silicon wafers are bonded together by tetra-ethyl-ortho-silicate. The top wafer (100 μm thick) with patterned through-holes allows carbon nanotubes to grow vertically from the catalyst layer (Fe) on the bottom wafer. By using thermal chemical vapor deposition technique, the authors have demonstrated the capability of growing aligned carbon nanotube bundles with an average length of 140 μm and a diameter of 30 μm from the through holes. The resistivity of the bundles is measured to be 0.0097 cm by using a nanomanipulator. © 2007 American Institute of Physics.
關聯:	Applied Physics Letters 91(4), pp.042108
DOI:	10.1063/1.2759989
显示于类别:	[物理學系暨研究所] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
0003-6951_91(4)p042108.pdf		288Kb	Adobe PDF	986	检视/开启
index.html		0Kb	HTML	80	检视/开启

在機構典藏中所有的数据项都受到原著作权保护.

TAIR相关文章