淡江大學機構典藏:Item 987654321/27741
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 62805/95882 (66%)
造访人次 : 3961064      在线人数 : 288
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜寻范围 查询小技巧：
  • 您可在西文检索词汇前后加上"双引号"，以获取较精准的检索结果
  • 若欲以作者姓名搜寻，建议至进阶搜寻限定作者字段，可获得较完整数据
    •  进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/27741


    题名: Compression Mechanisms in Highly Anisotropic Semiconductors
    作者: 薛宏中;Hsueh, H. C.;Crain, J.
    贡献者: 淡江大學物理學系
    日期: 1999-01-01
    上传时间: 2009-12-31 10:41:21 (UTC+8)
    出版者: Wiley-Blackwell
    摘要: We examine in detail the effect of hydrostatic compression on anisotropic semiconductors which, at ambient conditions, are characterised by the coexistence of both weak and strong cohesive forces. We focus on elucidating the response to compression of the structural, vibrational and electronic properties in quasi-two-dimensional layered materials and quasi-molecular solids. Results for layered IV–VI semiconductors (GeS and GeSe) and members of the quasi-molecular Group-V metal triiodides AsI3 are reported. Our methodology combines X-ray powder diffraction, Raman spectroscopy and ab initio electronic structure simulations. We demonstrate that compression in this class of material leads to complex compression mechanisms favouring more isotropically bonded phases, to gradual breakdown of low-frequency rigid unit vibrations and to unusual electron charge transfer effects which are reflected in non-monotonic variations of vibrational frequencies with pressure.
    關聯: Physica Status Solidi. B, Basic research 211(1), pp.365-372
    DOI: 0.1002/(SICI)1521-3951(199901)211:1<365::AID-PSSB365>3.0.CO;2-O
    显示于类别:[物理學系暨研究所] 期刊論文

    文件中的档案:

    档案 描述 大小格式浏览次数
    Compression Mechanisms in Highly Anisotropic Semiconductors.pdf172KbAdobe PDF1检视/开启
    index.html0KbHTML68检视/开启
    index.html館藏資訊0KbHTML225检视/开启

    在機構典藏中所有的数据项都受到原著作权保护.

    TAIR相关文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回馈