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    题名: Compression Mechanisms in Highly Anisotropic Semiconductors
    作者: 薛宏中;Hsueh, H. C.;Crain, J.
    贡献者: 淡江大學物理學系
    日期: 1999-01-01
    上传时间: 2009-12-31 10:41:21 (UTC+8)
    出版者: Wiley-Blackwell
    摘要: We examine in detail the effect of hydrostatic compression on anisotropic semiconductors which, at ambient conditions, are characterised by the coexistence of both weak and strong cohesive forces. We focus on elucidating the response to compression of the structural, vibrational and electronic properties in quasi-two-dimensional layered materials and quasi-molecular solids. Results for layered IV–VI semiconductors (GeS and GeSe) and members of the quasi-molecular Group-V metal triiodides AsI3 are reported. Our methodology combines X-ray powder diffraction, Raman spectroscopy and ab initio electronic structure simulations. We demonstrate that compression in this class of material leads to complex compression mechanisms favouring more isotropically bonded phases, to gradual breakdown of low-frequency rigid unit vibrations and to unusual electron charge transfer effects which are reflected in non-monotonic variations of vibrational frequencies with pressure.
    關聯: Physica Status Solidi. B, Basic research 211(1), pp.365-372
    DOI: 0.1002/(SICI)1521-3951(199901)211:1<365::AID-PSSB365>3.0.CO;2-O
    显示于类别:[物理學系暨研究所] 期刊論文

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