Size dependence of the electronic structures and electron-phonon coupling in ZnO quantum dots

doi:10.1063/1.2824396

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/27740

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題名:	Size dependence of the electronic structures and electron-phonon coupling in ZnO quantum dots
作者:	Ray, S. C.;Low, Y.;Tsai, H. M.;Pao, C. W.;Chiou, J. W.;Yang, S. C.;Chien, F. Z.;Pong, W. F.;Tsai, M.-H.;Lin, K. F.;Cheng, H. M.;Hsieh, W. F.;Lee, J. F.
貢獻者:	淡江大學物理學系
關鍵詞:	crystal orientation;electron-phonon interactions;II-VI semiconductors;photoluminescence;Raman spectra;semiconductor quantum dots;wide band gap semiconductors;XANES
日期:	2007-12
上傳時間:	2010-08-10 09:45:50 (UTC+8)
出版者:	College Park: American Institute of Physics (AIP)
摘要:	The electronic structures and optical properties of various sizes of ZnO quantum dots (QDs) were studied using x-ray absorption, photoluminescence, and Raman spectroscopy. The increase in the intensity ratio of the second-order Raman spectra of longitudinal optical mode and its fundamental mode, which is related to the strength of the electron-phonon coupling (EPC), is found to increase with the size of QD. The trend of EPC also correlates with the increase of the intensity ratio of the O 2pπ (Iπ) and 2pσ (Iσ) orbital features in the O K-edge x-ray absorption near-edge structure (XANES) as the size of QD increases. The EPC and XANES results suggest that the crystal orientations of ZnO QDs are approximately aligned with the c axis parallel with the polarization of x-ray photons.
關聯:	Applied Physics Letters 91(26), pp.262101(3 pages)
DOI:	10.1063/1.2824396
顯示於類別:	[物理學系暨研究所] 期刊論文

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