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    題名: Size dependence of the electronic structures and electron-phonon coupling in ZnO quantum dots
    作者: Ray, S. C.;Low, Y.;Tsai, H. M.;Pao, C. W.;Chiou, J. W.;Yang, S. C.;Chien, F. Z.;Pong, W. F.;Tsai, M.-H.;Lin, K. F.;Cheng, H. M.;Hsieh, W. F.;Lee, J. F.
    貢獻者: 淡江大學物理學系
    關鍵詞: crystal orientation;electron-phonon interactions;II-VI semiconductors;photoluminescence;Raman spectra;semiconductor quantum dots;wide band gap semiconductors;XANES
    日期: 2007-12
    上傳時間: 2010-08-10 09:45:50 (UTC+8)
    出版者: College Park: American Institute of Physics (AIP)
    摘要: The electronic structures and optical properties of various sizes of ZnO quantum dots (QDs) were studied using x-ray absorption, photoluminescence, and Raman spectroscopy. The increase in the intensity ratio of the second-order Raman spectra of longitudinal optical mode and its fundamental mode, which is related to the strength of the electron-phonon coupling (EPC), is found to increase with the size of QD. The trend of EPC also correlates with the increase of the intensity ratio of the O 2pπ (Iπ) and 2pσ (Iσ) orbital features in the O K-edge x-ray absorption near-edge structure (XANES) as the size of QD increases. The EPC and XANES results suggest that the crystal orientations of ZnO QDs are approximately aligned with the c axis parallel with the polarization of x-ray photons.
    關聯: Applied Physics Letters 91(26), pp.262101(3 pages)
    DOI: 10.1063/1.2824396
    顯示於類別:[物理學系暨研究所] 期刊論文

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