X-ray absorption spectroscopic study on Ti/n-GaN

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/27739

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题名:	X-ray absorption spectroscopic study on Ti/n-GaN
作者:	Kumar, M. Senthil;Kumar, V. Sures;Asokan, K.;Chiou, J. W.;Jan, J. C.;Pong, Way-faung;Kumar, J.
贡献者:	淡江大學物理學系
日期:	2005-10
上传时间:	2013-07-09 15:11:49 (UTC+8)
出版者:	Weinheim: Wiley - VCH Verlag GmbH & Co. KGaA
摘要:	Formation of low resistance and thermally stable ohmic contacts to GaN is of considerable importance for device applications. Several metallization schemes for ohmic contacts to n-GaN with low contact resistance have been proposed and investigated by different techniques. We investigate 500 Å Ti/n-GaN contacts of as-deposited and rapid furnace annealed at 900 °C for 30 s, using X-ray diffraction pattern, I–V measurements, and X-ray absorption near edge spectra at Ti K- and L3,2-edges and elucidate the mechanism responsible for the high ohmic behaviour. These measurements indicate the formation of an interfacial TixN layer and intermetallic alloys of Ti and Ga at the Ti/n-GaN interface upon high temperature annealing.
關聯:	Physica Status Solidi. A: Applications and Materials Science 202(14), pp.R161-R163
DOI:	10.1002/pssa.200521308
显示于类别:	[物理學系暨研究所] 期刊論文

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