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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27739

    Title: X-ray absorption spectroscopic study on Ti/n-GaN
    Authors: Kumar, M. Senthil;Kumar, V. Sures;Asokan, K.;Chiou, J. W.;Jan, J. C.;Pong, Way-faung;Kumar, J.
    Contributors: 淡江大學物理學系
    Date: 2005-10
    Issue Date: 2013-07-09 15:11:49 (UTC+8)
    Publisher: Weinheim: Wiley - VCH Verlag GmbH & Co. KGaA
    Abstract: Formation of low resistance and thermally stable ohmic contacts to GaN is of considerable importance for device applications. Several metallization schemes for ohmic contacts to n-GaN with low contact resistance have been proposed and investigated by different techniques. We investigate 500 Å Ti/n-GaN contacts of as-deposited and rapid furnace annealed at 900 °C for 30 s, using X-ray diffraction pattern, I–V measurements, and X-ray absorption near edge spectra at Ti K- and L3,2-edges and elucidate the mechanism responsible for the high ohmic behaviour. These measurements indicate the formation of an interfacial TixN layer and intermetallic alloys of Ti and Ga at the Ti/n-GaN interface upon high temperature annealing.
    Relation: Physica Status Solidi. A: Applications and Materials Science 202(14), pp.R161-R163
    DOI: 10.1002/pssa.200521308
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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