Electronic structure of CeCo2 thin films studied by X-ray absorption spectroscopy

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题名:	Electronic structure of CeCo2 thin films studied by X-ray absorption spectroscopy
作者:	Dong, C. L.;Asokan, K.;Chen, Y. Y.;Chen, C. L.;Chen, J. L.;Liu, Y. S.;Chang, C. L.;Lee, J. F.;Guo, J. H.
贡献者:	淡江大學物理學系
关键词:	Cerium compounds;Charge transfer;Electronic structure;Film thickness;Valence bands;X ray absorption spectroscopy;Hybridization;K-edge threshold;Mixed valence;Occupancy;Thin films
日期:	2008-04
上传时间:	2013-07-09 15:15:05 (UTC+8)
出版者:	Amsterdam: Elsevier BV * North-Holland
摘要:	We present a x-ray absorption near-edge structure study (XANES) at Ce L3-, and Co K-edges of CeCo2 thin films with the thickness varying from 30nm to 140nm. The Ce L3-edge measurements exhibit the mixed valence nature and tetravalent contribution that increases with the thickness of CeCo2. The variation in the spectral intensity observed at Co K-edge threshold indicates that there is a change in 3d occupancy and also in 3d-4f-5d hybridization. This study shows the effect of surface to bulk ratio and how it influences the charge transfer between Ce and Co ions and hence the electronic structure of CeCo2 thin films.
關聯:	Physica B: Condensed Matter 403(5-9), pp.854-855
DOI:	10.1016/j.physb.2007.10.057
显示于类别:	[物理學系暨研究所] 期刊論文

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